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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD895 DESCRIPTION *With TO-3PN package *Complement to type 2SB775 *Wide area of safe operation APPLICATIONS *85V/6A, AF 35W output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 85 6 6 10 60 150 -40~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;RBE= IC=5mA ;IE=0 IE=5mA ;IC=0 IC=4A ;IB=0.4A B 2SD895 MIN 85 100 6 TYP. MAX UNIT V V V 0.9 2.0 1.5 0.1 0.1 V V mA mA IC=1A;VCE=5V VCB=40V IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=3A ; VCE=5V IC=1A ; VCE=5V f=1MHz;VCB=10V 60 20 15 160 200 MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time IC=1.0A; IB1=-IB2=0.1A RL=20 0.20 0.82 3.88 s s s hFE-1 Classifications D 60-120 E 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD895 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD895 4 |
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